Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.029 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Number of Elements per Chip
1
Transistor Material
Si
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Stock information temporarily unavailable.
P.O.A.
N-Channel MOSFET, 6.6 A, 20 V, 8-Pin SO-8 Infineon IRF7311TRPBF
4000
P.O.A.
N-Channel MOSFET, 6.6 A, 20 V, 8-Pin SO-8 Infineon IRF7311TRPBF
Stock information temporarily unavailable.
4000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.029 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Number of Elements per Chip
1
Transistor Material
Si