Technical Document
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.08mm
Width
4.06mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Height
5.33mm
Product details
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Stock information temporarily unavailable.
Please check again later.
P.O.A.
25
P.O.A.
25
Technical Document
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.08mm
Width
4.06mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Height
5.33mm
Product details
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.