Technical Document
Specifications
Brand
onsemiTransistor Type
NPN/PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
420
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.2 x 1.35 x 1mm
Country of Origin
China
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P.O.A.
3000
P.O.A.
3000
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN/PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
420
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.2 x 1.35 x 1mm
Country of Origin
China