onsemi MMBTA13LT1G NPN Darlington Transistor, 300 mA 30 V HFE:20000, 3-Pin SOT-23 (TO-236
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23 (TO-236
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Maximum Operating Temperature
+150 °C
Length
3.04mm
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P.O.A.
3000
P.O.A.
3000
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23 (TO-236
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Maximum Operating Temperature
+150 °C
Length
3.04mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products