Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
3.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.7mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.65mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Stock information temporarily unavailable.
Please check again later.
P.O.A.
Standard
25
P.O.A.
Standard
25
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
3.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
3.7mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.65mm
Product details