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Toshiba N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S

RS Stock No.: 827-6230Brand: ToshibaManufacturers Part No.: TK56A12N1,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

P.O.A.

Each (In a Pack of 4) (Exc. Vat)

Toshiba N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

P.O.A.

Each (In a Pack of 4) (Exc. Vat)

Toshiba N-Channel MOSFET, 56 A, 120 V, 3-Pin TO-220SIS TK56A12N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more