Vishay N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
50
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
50
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products