Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18.3 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET® Gen IV
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.016 Ω, 0.0095 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
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P.O.A.
P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3
3000
P.O.A.
P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3
Stock information temporarily unavailable.
3000
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18.3 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET® Gen IV
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.016 Ω, 0.0095 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1