Phototransistors
A Phototransistor is a two-lead or three-lead semiconductor that is more sensitive than a photodiode. It senses light levels and uses them to alter currents to create an electrical signal.
The bipolar semiconductor is can be made from silicon or another semi-conductive material.
How do Phototransistors work?
Once detection of light such as IR (infrared), visible light or UV (U...
Showing 1-20 of 221 products
Wurth Elektronik
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Infrared, Visible Light
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100 (Collector Emitter)nA
150 °
NPN
2
Surface Mount
0603
1.6 x 0.8 x 0.8mm
20mA
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1100nm
400 → 1100 nm
400nm
0.8mm
0.8mm
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WL-STCW
35V
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1.6mm
5V
Vishay
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Near Infrared Radiation, Visible Infrared Radiation
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9mA
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15 °
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2
Surface Mount
GW
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VEMT
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Wurth Elektronik
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Infrared
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-
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100 (Collector Emitter)nA
120 °
NPN
2
Surface Mount
3528
3.5 x 2.8 x 1.9mm
20mA
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1100nm
700 → 1100 nm
700nm
1.9mm
2.8mm
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WL-STTB
35V
PLCC
3.5mm
5V
Wurth Elektronik
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Infrared
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-
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100 (Collector Emitter)nA
140 °
NPN
2
Surface Mount
1206
3.2 x 1.6 x 1.1mm
20mA
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1100nm
700 → 1100 nm
700nm
1.1mm
1.6mm
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WL-STCB
30V
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3.2mm
5V
onsemi
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Infrared
7µs
7µs
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100nA
±12 °
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2
Through Hole
T-1 3/4
6.1 Dia. x 8.77mm
39mA
6.1mm
880nm
880 nm
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8.77mm
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0.4V
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30V
Phototransistor
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5V
Wurth Elektronik
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Infrared, Visible Light
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100 (Collector Emitter)nA
120 °
NPN
2
Surface Mount
3528
3.5 x 2.8 x 1.9mm
20mA
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1100nm
400 → 1100 nm
400nm
1.9mm
2.8mm
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WL-STTW
35V
PLCC
3.5mm
5V
Wurth Elektronik
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Infrared
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100 (Collector Emitter)nA
30 °
NPN
2
Surface Mount
1206
3.2 x 1.6 x 1.85mm
20mA
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1100nm
700 → 1100 nm
700nm
1.85mm
1.6mm
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WL-STRB
30V
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3.2mm
5V
onsemi
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Infrared
50µs
10µs
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100nA
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4
Through Hole
Custom 4L
4.39 x 6.1 x 4.65mm
0.3 (Minimum)mA
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940nm
940 nm
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4.65mm
6.1mm
0.4V
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30V
Phototransistor
4.39mm
5V
P.O.A.
Check stock
25
Wurth Elektronik
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Infrared
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100 (Collector Emitter)nA
30 °
NPN
2
Surface Mount
1206
3.2 x 1.6 x 1.85mm
20mA
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1100nm
700 → 1100 nm
700nm
1.85mm
1.6mm
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WL-STRB
30V
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3.2mm
5V
P.O.A.
Check stock
10
onsemi
Infrared
Infrared
50µs
10µs
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100nA
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4
Through Hole
Custom 4L
4.39 x 6.1 x 4.65mm
1 (Minimum)mA
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940nm
940 nm
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4.65mm
6.1mm
0.4V
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30V
Phototransistor
4.39mm
5V
onsemi
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Infrared
50µs
10µs
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100nA
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-
4
Through Hole
Custom 4L
4.39 x 6.1 x 4.65mm
1 (Minimum)mA
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940nm
940 nm
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4.65mm
6.1mm
0.4V
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30V
Phototransistor
4.39mm
5V
P.O.A.
Check stock
10
onsemi
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Infrared
50µs
10µs
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100nA
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4
Through Hole
Custom 4L
4.39 x 6.1 x 4.65mm
0.3 (Minimum)mA
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940nm
940 nm
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4.65mm
6.1mm
0.4V
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30V
Phototransistor
4.39mm
5V
P.O.A.
Check stock
5
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