MOSFETs
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Showing 1-20 of 12446 products
P.O.A.
Check stock
10
Infineon
Type N
MOSFET
-
-
270A
-
40V
-
-
DirectFET
-
DirectFET
Surface
-
-
-
1mΩ
-
-
-
-
-
-
-
±20 V
1.3V
3.8W
220nC
-55°C
-
175°C
-
-
-
-
-
RoHS, Lead-Free
-
-
-
-
-
-
-
-
No
-
-
-
P.O.A.
Check stock
1
Infineon
Type N
MOSFET
-
-
270A
-
40V
-
-
DirectFET
-
DirectFET
Surface
-
-
-
1mΩ
-
-
-
-
-
-
-
±20 V
1.3V
3.8W
220nC
-55°C
-
175°C
-
-
-
-
-
RoHS, Lead-Free
-
-
-
-
-
-
-
-
No
-
-
-
Infineon
Type N
MOSFET
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-
1.9A
-
55V
-
-
SOT-223
-
HEXFET Fifth Generation
Surface
-
-
-
0.16Ω
-
-
-
-
-
-
-
20 V
1V
2.1W
7nC
-55°C
-
150°C
-
-
-
-
-
Lead-Free
-
-
-
-
-
-
-
-
No
304-40-532
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-
P.O.A.
Check stock
10
Infineon
Type N
MOSFET
-
-
1.9A
-
55V
-
-
SOT-223
-
HEXFET Fifth Generation
Surface
-
-
-
0.16Ω
-
-
-
-
-
-
-
20 V
1V
2.1W
7nC
-55°C
-
150°C
-
-
-
-
-
Lead-Free
-
-
-
-
-
-
-
-
No
-
-
-
Infineon
Type N
MOSFET
-
-
43A
-
150V
-
-
TO-263
-
HEXFET
Surface
-
-
3
0.042Ω
-
-
-
-
-
-
-
20 V
1.3V
200W
20nC
-55°C
-
175°C
-
-
-
-
-
EIA 418
-
-
-
-
-
-
-
-
No
-
-
-
P.O.A.
Check stock
5
Infineon
Type N
MOSFET
-
-
43A
-
150V
-
-
TO-263
-
HEXFET
Surface
-
-
3
0.042Ω
-
-
-
-
-
-
-
20 V
1.3V
200W
20nC
-55°C
-
175°C
-
-
-
-
-
EIA 418
-
-
-
-
-
-
-
-
No
-
-
-
Infineon
Type P
IR MOSFET
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-
-4A
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-30V
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-
SO-8
-
HEXFET
Through Hole
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-
8
160mΩ
-
-
Dual
-
-
-
-
±20 V
-
-
16.7nC
-55°C
-
175°C
-
5mm
4 mm
-
1.75mm
RoHS
-
-
-
-
-
-
-
-
No
304-40-518
-
-
P.O.A.
Check stock
10
Infineon
Type P
IR MOSFET
-
-
-4A
-
-30V
-
-
SO-8
-
HEXFET
Through Hole
-
-
8
160mΩ
-
-
Dual
-
-
-
-
±20 V
-
-
16.7nC
-55°C
-
175°C
-
5mm
4 mm
-
1.75mm
RoHS
-
-
-
-
-
-
-
-
No
-
-
-
Infineon
Type P
MOSFET
-
-
-21A
-
-30V
-
-
PQFN
-
HEXFET
Surface
-
-
8
3.7mΩ
-
-
-
-
-
-
-
20 V
-1.2V
3.1W
58nC
-55°C
-
150°C
-
5mm
6 mm
-
0.39mm
RoHS
-
-
-
-
-
-
-
-
No
-
-
-
P.O.A.
Check stock
5
Infineon
Type P
MOSFET
-
-
-21A
-
-30V
-
-
PQFN
-
HEXFET
Surface
-
-
8
3.7mΩ
-
-
-
-
-
-
-
20 V
-1.2V
3.1W
58nC
-55°C
-
150°C
-
5mm
6 mm
-
0.39mm
RoHS
-
-
-
-
-
-
-
-
No
-
-
-
Infineon
Type P
MOSFET
-
-
5A
-
-
-
-
SO-8
-
HEXFET
Surface
-
-
8
0.13Ω
-
-
-
-
-
-
-
20 V
-1.2V
-
27nC
-
-
-
-
5mm
4 mm
-
1.75mm
RoHS
-
-
-
-
-
-
-
-
No
304-40-517
-
-
P.O.A.
Check stock
10
Infineon
Type P
MOSFET
-
-
5A
-
-
-
-
SO-8
-
HEXFET
Surface
-
-
8
0.13Ω
-
-
-
-
-
-
-
20 V
-1.2V
-
27nC
-
-
-
-
5mm
4 mm
-
1.75mm
RoHS
-
-
-
-
-
-
-
-
No
-
-
-
P.O.A.
Check stock
10
P.O.A.
Check stock
5
Infineon
Type P, Type N
MOSFET
-
-
6.8A
-
30V
-
-
SO-8
-
IRF
Surface
-
-
8
-
-
-
-
-
-
-
-
±20 V
1.2V
2W
8.1nC
-55°C
-
150°C
-
-
-
-
-
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
-
P.O.A.
Check stock
10
Infineon
Type P, Type N
MOSFET
-
-
6.8A
-
30V
-
-
SO-8
-
IRF
Surface
-
-
8
-
-
-
-
-
-
-
-
±20 V
1.2V
2W
8.1nC
-55°C
-
150°C
-
-
-
-
-
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
-
Infineon
Type P
MOSFET
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-
10A
-
30V
-
-
SO-8
-
IRF
Surface
-
-
8
0.035Ω
-
-
-
-
-
-
-
20 V
1V
2.5W
61nC
-55°C
-
150°C
-
5mm
4 mm
-
1.75mm
RoHS
-
-
-
-
-
-
-
-
-
-
-
-
P.O.A.
Check stock
5
Infineon
Type P
MOSFET
-
-
10A
-
30V
-
-
SO-8
-
IRF
Surface
-
-
8
0.035Ω
-
-
-
-
-
-
-
20 V
1V
2.5W
61nC
-55°C
-
150°C
-
5mm
4 mm
-
1.75mm
RoHS
-
-
-
-
-
-
-
-
-
-
-
-
Infineon
Type P
MOSFET
-
-
13A
-
-12V
-
-
SO-8
-
IRF7410
Surface
-
-
8
7mΩ
-
-
-
-
-
-
-
±8 V
-1.2V
2.5W
91nC
-55°C
-
150°C
-
-
-
-
-
RoHS
-
-
-
-
-
-
-
-
No
-
-
-
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