MOSFETs
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Showing 1-20 of 12368 products
P.O.A.
Check stock
10
Infineon
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Type N
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MOSFET
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270A
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40V
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DirectFET
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DirectFET
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Surface
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-
1mΩ
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-
-
-
-
-
-55°C
3.8W
±20 V
1.3V
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220nC
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175°C
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RoHS, Lead-Free
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-
-
-
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-
-
-
-
-
-
-
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No
P.O.A.
Check stock
1
Infineon
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Type N
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MOSFET
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270A
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40V
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DirectFET
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DirectFET
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Surface
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-
1mΩ
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-
-
-
-
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-55°C
3.8W
±20 V
1.3V
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220nC
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175°C
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RoHS, Lead-Free
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-
-
-
-
-
-
-
-
-
-
-
-
-
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No
Infineon
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Type N
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MOSFET
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1.9A
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55V
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SOT-223
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HEXFET Fifth Generation
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Surface
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-
0.16Ω
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-
-
-
-
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-55°C
2.1W
20 V
1V
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7nC
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150°C
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Lead-Free
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-
-
-
-
-
-
-
-
-
-
-
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No
P.O.A.
Check stock
10
Infineon
-
Type N
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MOSFET
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1.9A
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55V
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SOT-223
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HEXFET Fifth Generation
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Surface
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0.16Ω
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-
-
-
-
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-55°C
2.1W
20 V
1V
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7nC
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150°C
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Lead-Free
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
No
P.O.A.
Check stock
2
Infineon
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Type N
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MOSFET
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120A
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75V
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TO-263
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HEXFET
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PCB
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-
6.3mΩ
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-
-
-
-
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-55°C
200W
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1.3V
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-
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175°C
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No
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-
-
-
-
-
-
-
-
-
-
-
-
-
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No
P.O.A.
Check stock
5
Infineon
-
Type N
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MOSFET
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43A
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150V
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TO-263
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HEXFET
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Surface
3
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0.042Ω
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-
-
-
-
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-55°C
200W
20 V
1.3V
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20nC
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175°C
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EIA 418
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-
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-
-
-
-
-
-
-
-
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No
P.O.A.
Check stock
5
Infineon
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Type N
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MOSFET
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43A
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150V
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TO-263
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HEXFET
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Surface
3
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0.042Ω
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-
-
-
-
-
-55°C
200W
20 V
1.3V
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20nC
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175°C
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EIA 418
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-
-
-
-
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-
-
-
-
-
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No
P.O.A.
Check stock
2
Infineon
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Type N
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MOSFET
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76A
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200V
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TO-220
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HEXFET
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PCB
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20mΩ
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-
-
-
-
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-55°C
375W
20 V
1.3V
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-
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175°C
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No
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-
-
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-
-
-
-
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No
P.O.A.
Check stock
2
Infineon
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Type N
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MOSFET
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88A
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100V
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TO-263
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HEXFET
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PCB
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-
10mΩ
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-
-
-
-
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-55°C
200W
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1.3V
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-
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175°C
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No
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-
-
-
-
-
-
-
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No
Infineon
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Type P
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IR MOSFET
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-4A
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-30V
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SO-8
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HEXFET
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Through Hole
8
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160mΩ
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-
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Dual
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-
-55°C
-
±20 V
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-
16.7nC
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175°C
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RoHS
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1.75mm
4 mm
5mm
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-
-
-
-
-
-
-
-
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No
P.O.A.
Check stock
10
Infineon
-
Type P
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IR MOSFET
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-4A
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-30V
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SO-8
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HEXFET
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Through Hole
8
-
160mΩ
-
-
-
Dual
-
-
-55°C
-
±20 V
-
-
16.7nC
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175°C
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RoHS
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1.75mm
4 mm
5mm
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-
-
-
-
-
-
-
-
-
-
No
Infineon
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Type P
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MOSFET
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-21A
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-30V
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PQFN
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HEXFET
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Surface
8
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3.7mΩ
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-
-
-
-
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-55°C
3.1W
20 V
-1.2V
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58nC
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150°C
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RoHS
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0.39mm
6 mm
5mm
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-
-
-
-
-
-
-
-
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No
P.O.A.
Check stock
5
Infineon
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Type P
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MOSFET
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-21A
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-30V
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PQFN
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HEXFET
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Surface
8
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3.7mΩ
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-
-
-
-
-
-55°C
3.1W
20 V
-1.2V
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58nC
-
150°C
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RoHS
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0.39mm
6 mm
5mm
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-
-
-
-
-
-
-
-
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No
Infineon
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Type P
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MOSFET
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5A
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-
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SO-8
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HEXFET
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Surface
8
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0.13Ω
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-
-
-
-
-
-
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20 V
-1.2V
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27nC
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-
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RoHS
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1.75mm
4 mm
5mm
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-
-
-
-
-
-
-
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No
P.O.A.
Check stock
10
Infineon
-
Type P
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MOSFET
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5A
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-
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SO-8
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HEXFET
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Surface
8
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0.13Ω
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-
-
-
-
-
-
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20 V
-1.2V
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27nC
-
-
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RoHS
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1.75mm
4 mm
5mm
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-
-
-
-
-
-
-
-
-
-
No
P.O.A.
Check stock
10
P.O.A.
Check stock
5
Infineon
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Type P, Type N
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MOSFET
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6.8A
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30V
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SO-8
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IRF
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Surface
8
-
-
-
-
-
-
-
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-55°C
2W
±20 V
1.2V
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8.1nC
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150°C
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RoHS Compliant
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