MOSFETs
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Showing 1-20 of 12151 products
Vishay
N
2.5 A
60 V
HVMDIP
Through Hole
4
100 mΩ
Enhancement
-
2V
1.3 W
Single
-20 V, +20 V
25 nC @ 10 V
1
5mm
+175 °C
6.29mm
Si
-
-55 °C
-
3.37mm
-
-
Vishay
N
1.3 A
100 V
HVMDIP
Through Hole
4
270 mΩ
Enhancement
-
2V
1.3 W
Single
-20 V, +20 V
16 nC @ 10 V
1
5mm
+175 °C
6.29mm
Si
-
-55 °C
-
3.37mm
-
-
Infineon
N
9.4 A
100 V
IPAK (TO-251)
Through Hole
3
210 mΩ
Enhancement
4V
2V
48 W
Single
-20 V, +20 V
25 nC @ 10 V
1
6.6mm
+175 °C
2.3mm
Si
HEXFET
-55 °C
-
6.1mm
-
-
Vishay
N
600 mA
200 V
HVMDIP
Through Hole
4
1.5 Ω
Enhancement
-
2V
1 W
Single
-20 V, +20 V
8.2 nC @ 10 V
1
5mm
+150 °C
6.29mm
Si
-
-55 °C
-
3.37mm
-
-
Infineon
N
84 A
60 V
TO-220AB
Through Hole
3
12 mΩ
Enhancement
4V
2V
200 W
Single
-20 V, +20 V
130 nC @ 10 V
1
10.54mm
+175 °C
4.69mm
Si
HEXFET
-55 °C
-
8.77mm
-
-
P.O.A.
Check stock
1
P.O.A.
Check stock
50
Nexperia
N, P
170 mA, 330 mA
50 V, 60 V
SOT-666
Surface Mount
6
3.6 Ω, 13.5 Ω
Enhancement
2.1V
1.1V
500 mW
Isolated
-20 V, +20 V
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
2
1.7mm
+150 °C
1.3mm
Si
-
-55 °C
-
0.6mm
-
-
P.O.A.
Check stock
50
Nexperia
N, P
220 mA, 400 mA
30 V
SOT-666
Surface Mount
6
2.8 Ω, 7.8 Ω
Enhancement
1.1V
0.6V
500 mW
Isolated
-8 V, +8 V
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
2
1.7mm
+150 °C
1.3mm
Si
-
-55 °C
-
0.6mm
-
-
P.O.A.
Check stock
10
P.O.A.
Check stock
5
P.O.A.
Check stock
5
P.O.A.
Check stock
5
P.O.A.
Check stock
5
...