Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1

RS Stock No.: 753-2800Brand: InfineonManufacturers Part No.: BSP129H6327XTSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

240 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.8 nC @ 5 V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

P.O.A.

Each (In a Pack of 5) (Exc. Vat)

Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1
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P.O.A.

Each (In a Pack of 5) (Exc. Vat)

Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

240 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.8 nC @ 5 V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more