onsemi MJD45H11-1G PNP Transistor, -8 A, -80 V, 3-Pin IPAK
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-80 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
20 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
10 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.73 x 2.38 x 6.22mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
Each (In a Tube of 75) (Exc. Vat)
75
P.O.A.
Each (In a Tube of 75) (Exc. Vat)
75
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Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-80 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
20 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
10 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.73 x 2.38 x 6.22mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products