Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.15mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Series
BSC014N04LS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Forward Diode Voltage
1V
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P.O.A.
10
P.O.A.
10
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.15mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Series
BSC014N04LS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Forward Diode Voltage
1V