Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI
Technical Document
Specifications
Brand
InfineonMemory Size
4Mbit
Organisation
512K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
5.33 x 5.33 x 1.78mm
Length
5.33mm
Maximum Operating Supply Voltage
3.6 V
Width
5.33mm
Height
1.78mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
512K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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P.O.A.
Standard
1
P.O.A.
Standard
1
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Technical Document
Specifications
Brand
InfineonMemory Size
4Mbit
Organisation
512K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
5.33 x 5.33 x 1.78mm
Length
5.33mm
Maximum Operating Supply Voltage
3.6 V
Width
5.33mm
Height
1.78mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
512K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products