Infineon OptiMOS™ 5 N-Channel MOSFET, 45 A, 60 V, 3-Pin DPAK IPD053N06NATMA1

RS Stock No.: 906-4491Brand: InfineonManufacturers Part No.: IPD053N06NATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

6.22mm

Transistor Material

Si

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Each (In a Pack of 10) (Exc. Vat)

Infineon OptiMOS™ 5 N-Channel MOSFET, 45 A, 60 V, 3-Pin DPAK IPD053N06NATMA1
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P.O.A.

Each (In a Pack of 10) (Exc. Vat)

Infineon OptiMOS™ 5 N-Channel MOSFET, 45 A, 60 V, 3-Pin DPAK IPD053N06NATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

6.22mm

Transistor Material

Si

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more