Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
150 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
30V
Number of Elements per Chip
2
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK Infineon IRFR24N15DTRPBF
2000
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK Infineon IRFR24N15DTRPBF
Stock information temporarily unavailable.
2000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
150 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
30V
Number of Elements per Chip
2