Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
236 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Height
16.51mm
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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P.O.A.
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P.O.A.
5
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
236 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Height
16.51mm
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.