Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
220
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
Small Signal PNP Transistors, Nexperia
Bipolar Transistors, Nexperia
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P.O.A.
50
P.O.A.
50
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
220
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details