onsemi MJ11033G PNP Darlington Transistor, 50 A 120 V HFE:400, 2-Pin TO-204
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-204
Mounting Type
Through Hole
Pin Count
2
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
400
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
3.5 V
Maximum Operating Temperature
+200 °C
Length
38.86mm
Height
8.51mm
Width
26.67mm
Maximum Power Dissipation
300 W
Minimum Operating Temperature
-55 °C
Dimensions
38.86 x 26.67 x 8.51mm
Country of Origin
Mexico
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
100
P.O.A.
100
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Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-204
Mounting Type
Through Hole
Pin Count
2
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
400
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
3.5 V
Maximum Operating Temperature
+200 °C
Length
38.86mm
Height
8.51mm
Width
26.67mm
Maximum Power Dissipation
300 W
Minimum Operating Temperature
-55 °C
Dimensions
38.86 x 26.67 x 8.51mm
Country of Origin
Mexico
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products