Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247-4L
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.03 Ω
Maximum Gate Threshold Voltage
4.4V
Number of Elements per Chip
1
Transistor Material
SiC
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Stock information temporarily unavailable.
P.O.A.
SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S
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Standard
1
P.O.A.
SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L onsemi NTH4L022N120M3S
Stock information temporarily unavailable.
Select packaging type
Standard
1
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247-4L
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.03 Ω
Maximum Gate Threshold Voltage
4.4V
Number of Elements per Chip
1
Transistor Material
SiC