Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
4
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Screw Mount
Maximum Operating Temperature
+200 °C
Maximum Drain Source Voltage
70 V
Maximum Gate Threshold Voltage
7V
Series
TetraFET
Maximum Continuous Drain Current
5 A
Maximum Power Dissipation
50 W
Height
6.6mm
Width
9.52mm
Length
24.76mm
Maximum Drain Source Resistance
1 Ω
Package Type
DA
Brand
SemelabCountry of Origin
United Kingdom
Product details
Fully Moulded Subminiature GB Series
Compact structure, less than 7mm in height excluding operating plunger
Pitch between terminals 2.54mm
Fully moulded construction with excellent electrostatic voltage resistance
Completely washable high ingress protection design
Certification: IECQ
Note: Button is optional, see later in this section
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P.O.A.
25
P.O.A.
25
Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
4
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Screw Mount
Maximum Operating Temperature
+200 °C
Maximum Drain Source Voltage
70 V
Maximum Gate Threshold Voltage
7V
Series
TetraFET
Maximum Continuous Drain Current
5 A
Maximum Power Dissipation
50 W
Height
6.6mm
Width
9.52mm
Length
24.76mm
Maximum Drain Source Resistance
1 Ω
Package Type
DA
Brand
SemelabCountry of Origin
United Kingdom
Product details
Fully Moulded Subminiature GB Series
Compact structure, less than 7mm in height excluding operating plunger
Pitch between terminals 2.54mm
Fully moulded construction with excellent electrostatic voltage resistance
Completely washable high ingress protection design
Certification: IECQ
Note: Button is optional, see later in this section