Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-120 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2.9 x 1.5 x 1.1mm
Country of Origin
Japan
Product details
Small Signal PNP Transistors, Toshiba
Bipolar Transistors, Toshiba
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P.O.A.
50
P.O.A.
50
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-120 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2.9 x 1.5 x 1.1mm
Country of Origin
Japan
Product details