Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Length
10mm
Base Current
1A
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Country of Origin
Japan
Product details
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Stock information temporarily unavailable.
Please check again later.
P.O.A.
10
P.O.A.
10
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Length
10mm
Base Current
1A
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Country of Origin
Japan
Product details