Infineon HEXFET N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Package Type
DirectFET ISOMETRIC
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Transistor Material
Si
Number of Elements per Chip
1
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P.O.A.
Each (On a Reel of 4800) (Exc. Vat)
4800
P.O.A.
Each (On a Reel of 4800) (Exc. Vat)
4800
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Package Type
DirectFET ISOMETRIC
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Transistor Material
Si
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products