Technical Document
Specifications
Brand
OSI OptoelectronicsSpectrums Detected
Infrared
Wavelength of Peak Sensitivity
970nm
Package Type
TO-18
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
3
Diode Material
Si
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
1100nm
Height
0.2in
Diameter
5.33mm
Series
Photoconductive
Typical Rise Time
6ns
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P.O.A.
OSI Optoelectronics, PIN-020A IR Si Photodiode, Through Hole TO-18
1
P.O.A.
OSI Optoelectronics, PIN-020A IR Si Photodiode, Through Hole TO-18
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
OSI OptoelectronicsSpectrums Detected
Infrared
Wavelength of Peak Sensitivity
970nm
Package Type
TO-18
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
3
Diode Material
Si
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
1100nm
Height
0.2in
Diameter
5.33mm
Series
Photoconductive
Typical Rise Time
6ns