Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
3.9mm
Length
4.95mm
Typical Gate Charge @ Vgs
19 nC @ 8V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
Country of Origin
China
P.O.A.
Each (On a Reel of 2500) (Exc. Vat)
2500
P.O.A.
Each (On a Reel of 2500) (Exc. Vat)
2500
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
3.9mm
Length
4.95mm
Typical Gate Charge @ Vgs
19 nC @ 8V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
Country of Origin
China