Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ P7
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.9 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
P.O.A.
Each (Supplied in a Tube) (Exc. Vat)
Production pack (Tube)
15
P.O.A.
Each (Supplied in a Tube) (Exc. Vat)
Production pack (Tube)
15
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ P7
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.9 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si