Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Stock information temporarily unavailable.
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin HiP247-4 SCT070W120G3-4
Select packaging type
Standard
1
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin HiP247-4 SCT070W120G3-4
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China