STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 17.5 A, 950 V, 3-Pin TO-220 STP20N95K5
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
950 V
Series
MDmesh, SuperMESH
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
China
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Standard
5
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Standard
5
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
950 V
Series
MDmesh, SuperMESH
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
China
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products