Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Package Type
TISON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
2
Length
5.1mm
Typical Gate Charge @ Vgs
22 nC @ 4.5 V, 5.9 nC @ 4.5 V
Width
6.1mm
Maximum Operating Temperature
+150 °C
Series
OptiMOS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
Malaysia
Product details
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Stock information temporarily unavailable.
Please check again later.
P.O.A.
5
P.O.A.
5
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Package Type
TISON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
2
Length
5.1mm
Typical Gate Charge @ Vgs
22 nC @ 4.5 V, 5.9 nC @ 4.5 V
Width
6.1mm
Maximum Operating Temperature
+150 °C
Series
OptiMOS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
Malaysia
Product details
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.