Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
500 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
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P.O.A.
N-Channel MOSFET, 2.2 A, 500 V, 3-Pin DPAK Infineon IPD50R2K0CEAUMA1
Select packaging type
Production pack (Reel)
50
P.O.A.
N-Channel MOSFET, 2.2 A, 500 V, 3-Pin DPAK Infineon IPD50R2K0CEAUMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
500 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1