Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
4.93mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
34.9 nC @ 10 V
Height
16.13mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Country of Origin
Korea, Republic Of
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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P.O.A.
Production pack (Tube)
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P.O.A.
Production pack (Tube)
5
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
4.93mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
34.9 nC @ 10 V
Height
16.13mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Country of Origin
Korea, Republic Of
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.