Nexperia BST52,115 NPN Darlington Transistor, 1 A 80 V HFE:1000, 4-Pin UPAK
Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
UPAK
Mounting Type
Surface Mount
Pin Count
4
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
90 V
Maximum Collector Emitter Saturation Voltage
1.3 V
Maximum Collector Cut-off Current
0.00005mA
Width
2.6mm
Minimum Operating Temperature
-65 °C
Dimensions
4.6 x 2.6 x 1.6mm
Height
1.6mm
Maximum Operating Temperature
+150 °C
Length
4.6mm
Product details
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
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P.O.A.
1000
P.O.A.
1000
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Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
UPAK
Mounting Type
Surface Mount
Pin Count
4
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
90 V
Maximum Collector Emitter Saturation Voltage
1.3 V
Maximum Collector Cut-off Current
0.00005mA
Width
2.6mm
Minimum Operating Temperature
-65 °C
Dimensions
4.6 x 2.6 x 1.6mm
Height
1.6mm
Maximum Operating Temperature
+150 °C
Length
4.6mm
Product details
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products