Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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P.O.A.
Standard
250
P.O.A.
Standard
250
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Country of Origin
China