Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Width
4.9mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
Country of Origin
China
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P.O.A.
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P.O.A.
30
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Width
4.9mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
Country of Origin
China