Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Package Type
Hip247
Series
SCTW90
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
SiC
Number of Elements per Chip
1
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P.O.A.
SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
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1
P.O.A.
SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Stock information temporarily unavailable.
Select packaging type
1
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Package Type
Hip247
Series
SCTW90
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
SiC
Number of Elements per Chip
1