Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
650 V
Series
ST
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.036 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Number of Elements per Chip
1
Transistor Material
SiC
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P.O.A.
SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STMicroelectronics STW70N65DM6
30
P.O.A.
SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STMicroelectronics STW70N65DM6
Stock information temporarily unavailable.
30
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
650 V
Series
ST
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.036 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Number of Elements per Chip
1
Transistor Material
SiC