N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T

RS Stock No.: 900-9955Brand: Texas InstrumentsManufacturers Part No.: CSD13383F4T
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

12 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Length

0.64mm

Typical Gate Charge @ Vgs

2 nC @ 0 V

Maximum Operating Temperature

+150 °C

Width

1.04mm

Transistor Material

Si

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.35mm

Product details

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Texas Instruments

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

12 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Length

0.64mm

Typical Gate Charge @ Vgs

2 nC @ 0 V

Maximum Operating Temperature

+150 °C

Width

1.04mm

Transistor Material

Si

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.35mm

Product details

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more