N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products