Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
0.737 nC @ 4.5 V
Width
0.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (In a Pack of 100) (Exc. Vat)
Standard
100
P.O.A.
Each (In a Pack of 100) (Exc. Vat)
Stock information temporarily unavailable.
Standard
100
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
0.737 nC @ 4.5 V
Width
0.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


