Diodes Inc Quad N/P-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC DMHC3025LSD-13
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.5 A, 7.8 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ, 80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
4
Width
3.95mm
Length
4.95mm
Typical Gate Charge @ Vgs
11.4 nC @ 10 V, 11.7 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
China
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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P.O.A.
Each (On a Reel of 2500) (Exc. Vat)
2500
P.O.A.
Each (On a Reel of 2500) (Exc. Vat)
2500
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.5 A, 7.8 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ, 80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
4
Width
3.95mm
Length
4.95mm
Typical Gate Charge @ Vgs
11.4 nC @ 10 V, 11.7 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Country of Origin
China
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products