Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
50
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


