Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
20 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
2.05mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.05mm
Typical Gate Charge @ Vgs
14.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.58mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Stock information temporarily unavailable.
Production pack (Reel)
25
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
20 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
2.03 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
2.05mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.05mm
Typical Gate Charge @ Vgs
14.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.58mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


