N-Channel MOSFET, 1.3 A, 700 V, 3 + Tab-Pin SOT-223 Diodes Inc DXT13003DG-13

RS Stock No.: 146-0957Brand: DiodesZetexManufacturers Part No.: DXT13003DG-13
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

700 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+9 V

Width

3.55mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.55mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

High Voltage Transistors, Diodes Inc

Transistors, Diodes Inc

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 1.3 A, 700 V, 3 + Tab-Pin SOT-223 Diodes Inc DXT13003DG-13

P.O.A.

N-Channel MOSFET, 1.3 A, 700 V, 3 + Tab-Pin SOT-223 Diodes Inc DXT13003DG-13
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

700 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+9 V

Width

3.55mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.55mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

High Voltage Transistors, Diodes Inc

Transistors, Diodes Inc

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more