Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.12 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Typical Gate Charge @ Vgs
5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.95V
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (In a Pack of 25) (Exc. Vat)
Standard
25
P.O.A.
Each (In a Pack of 25) (Exc. Vat)
Standard
25
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.12 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Typical Gate Charge @ Vgs
5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.95V
Product details