Hamamatsu, S12086 Near Infrared Radiation Si Photodiode, Through Hole TO-18
Technical Document
Specifications
Brand
Hamamatsu PhotonicsSpectrums Detected
Near Infrared Radiation
Wavelength of Peak Sensitivity
800nm
Package Type
TO-18
Mounting Type
Through Hole
Number of Pins
3
Diode Material
Si
Country of Origin
Japan
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P.O.A.
Hamamatsu, S12086 Near Infrared Radiation Si Photodiode, Through Hole TO-18
1
P.O.A.
Hamamatsu, S12086 Near Infrared Radiation Si Photodiode, Through Hole TO-18
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
Hamamatsu PhotonicsSpectrums Detected
Near Infrared Radiation
Wavelength of Peak Sensitivity
800nm
Package Type
TO-18
Mounting Type
Through Hole
Number of Pins
3
Diode Material
Si
Country of Origin
Japan
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products