Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
545 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
DirectFET
Mounting Type
Surface Mount
Pin Count
15
Maximum Drain Source Resistance
0.0006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Transistor Material
Silicon
Number of Elements per Chip
1
P.O.A.
Each (In a Pack of 2) (Exc. Vat)
Standard
2
P.O.A.
Each (In a Pack of 2) (Exc. Vat)
Stock information temporarily unavailable.
Standard
2
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
545 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
DirectFET
Mounting Type
Surface Mount
Pin Count
15
Maximum Drain Source Resistance
0.0006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Transistor Material
Silicon
Number of Elements per Chip
1