Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.295 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Silicon
Number of Elements per Chip
1
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Standard
5
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.295 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Silicon
Number of Elements per Chip
1