Infineon BCV47E6327HTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-23
Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
0.01mA
Length
2.9mm
Height
0.9mm
Width
1.3mm
Maximum Power Dissipation
360 mW
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
3000
P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
Stock information temporarily unavailable.
3000
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
0.01mA
Length
2.9mm
Height
0.9mm
Width
1.3mm
Maximum Power Dissipation
360 mW
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products